on-state current 1.25 amp fs02...n surface mount scr these series of s ilicon c ontrolled r ectifier use a high performance pnpn technology. these parts are intended for general purpose applications where high gate sensitivity is required using surface mount technology. absolute maximum ratings, according to iec publication no. 134 on-state current* average on-state current* non-repetitive on-state current non-repetitive on-state current fusing current peak reverse gate voltage peak gate current peak gate dissipation gate dissipation operating temperature storage temperature soldering temperature i t(rms) parameter conditions min. max. unit sot223 (plastic) gate trigger current < 200 ? off-state voltage 200 v ?800 v symbol i t(av) i tsm i tsm i 2 t v grm i gm p gm p g(av) t j t stg t sld half cycle, q = 180 ? t tab = 95 ? half cycle, q = 180 ? t tab = 95 ? half cycle, 60 hz, t j = 25 ? half cycle, 50 hz, t j = 25 ? t p = 10ms, half cycle i gr = 10 ?, t j = 25 ? 20 ? max. 20 ? max. 20 ms max. 10s max. 1.25 0.8 25 22.5 2.5 8 -40 -40 a a a a a 2 s v a w w ? ? ? 1.2 3 0.2 +125 +150 260 * with 5 cm 2 copper (e= 35 m m) surface under tab. jun - 02 repetitive peak off state voltage parameter conditions voltage unit symbol v drm v rrm r gk = 1 k w b 200 v d 400 m 600 n 800
fs02...n surface mount scr part number information jun - 02 fagor scr current case voltage sensitivity f s 02 01 b n 00 forming rb packaging electrical characteristics gate trigger current off-state leakage current on-state voltage on-state threshold voltage dinamic resistance gate trigger voltage gate non trigger voltage holding current latching current parameter conditions sensitivity unit symbol i gt i drm v d = 12 v dc , r l = 140 w , t j = 25 ? 01 1 20 ? 04 15 50 500 5 1.45 0.9 150 0.8 0.1 15 ? v v m w v v ma ma v/? min max max max max max max max min max max min min 50 25 60 a/? / i rrm v tm v t(o) r d v gt i h i l dv / dt di / dt r th(j-l) r th(j-a) critical rate of voltage rise critical rate of current rise thermal resistance junction-leads for dc thermal resistance junction-ambient ?/w ?/w v d = v drm , r gk = 1k w , t j = 125 ? t j = 25 ? v r = v rrm , at i t = 1.6 amp, tp = 380 ?, t j = 25 ? t j = 125 ? t j = 125 ? v d = 12 v dc , r l = 140 w , t j = 25 ? i t = 50 ma , r gk = 1k w , t j = 25 ? i g = 1 ma , r gk = 1k w , t j = 25 ? v d = 0.67 x v drm , r gk = 1k w , t j = 125 ? 5 6 02 200 03 20 200 15 2010 tr 100 ns, f = 60 hz, t j = 125 ? i g = 2 x i gt v gd v d = v drm , r l = 3.3k w , t j = 125 ? r gk = 1k w ,
fs02...n surface mount scr 0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 p (w) a 360 fig. 1: maximum average power dissipation versus average on-state current 0 20 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 40 60 80 100 120 140 p (w) fig. 2: correlation between maximum average power dissipation and maximum allowable temperature (tamb and t tab). t tab (?) -85 -95 -105 -115 -125 fig. 3: average on-state current versus tab temperature 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 igt (tj) fig. 5: relative variation of gate trigger current and holding current versus junction temperature. -40 -20 0 60 80 100 120 140 igt (tj = 25 ?) ih (tj) ih (tj = 25 ?) 4020 ih igt 1 10 100 1000 fig. 6: non repetitive surge peak on-state current versus number of cycles. 25 20 15 10 5 0 i tsm (a) tj initial = 25 c 1.00 0.10 0.01 zth(j-a) / rth(j-a) fig. 4: relative variation of thermal impedance junction to ambient versus pulse duration. 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2 standard foot print, e (cu) = 35 ? jun - 02 rth (j-l) rth (j-a) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 i t(av) (a) 0 20 40 60 80 100 120 a = 180 10 30 50 70 90 110 130 dc 1.0 1.2 1.4 a = 30 a = 60 a = 90 a = 120 a = 180 dc tamb ( c) tj (?) number of cycles tp (s) t lead (?) i t(av) (a)
fs02...n jun - 02 surface mount scr package mechanical data sot223 (plastic) a b c d e f g h i j k ref. dimensions milimeters min. typ. max. weight: 0.11 g foot print 6.30 6.70 3.30 - - 2.95 0.65 1.50 0.50 - 0.25 6.50 7.00 3.50 4.60 2.30 3.00 0.70 1.60 0.60 0.02 0.30 6.70 7.30 3.70 - - 3.15 0.85 1.70 0.70 0.05 0.35 3.3 1.5 1.5 (3x) 1 2.3 4.6 6.4 g f a 16?max. (4x) h d e i b c j 10?max. k fig. 8: on-state characteristics (maximum values). 100 10 1 0.1 i tsm (a). i 2 t (a 2 s) fig. 7: non repetitive surge peak on-state current for a sinusoidal pulse with width: tp 10 ms, and corresponding value of i 2 t. 100 10 1 i tm (a) 1 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 tj max tj initial 25 c tj max vto = 1.05 v rt = 0.150 w v tm (v) tj initial = 25 ? tp(ms) i 2 t i tsm
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